2002. 12. 11
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB817
TRIPLE DIFFUSED PNP TRANSISTOR
Revision No : 2
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD1047.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
P
P
T
M
J
Q
1
2
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:60 120, Y:100 200
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-160
V
Collector-Emitter Voltage
V
CEO
-140
V
Emitter-Base Voltage
V
EBO
-6
V
Collector Current
DC
I
C
-12
A
Pulse
I
CP
-15
Collector Power Dissipation (Tc=25 )
P
C
100
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-80V, I
E
=0
-
-
-0.1
mA
Emitter Cut-off Current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
mA
DC Current Gain
h
FE
(1) (Note)
V
CE
=-5V, I
C
=-1A
60
-
200
h
FE
2
V
CE
=-5V, I
C
=-6A
20
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-5A, I
B
=-0.5A
-
-
-2.5
V
Base-Emitter Voltage
V
BE
V
CE
=-5V, I
C
=-1A
-
-
-1.5
V
Transition Frequency
f
T
V
CE
=-5V, I
C
=-1A
-
15
-
MHz
Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
300
-
pF
Turn On Time
t
on
V
CC
=-20V
I
C
=1A=10 I
B1
=-10 I
B2
R
L
=20
-
0.25
-
S
Fall Time
t
f
-
0.53
-
Storage Time
t
stg
-
1.61
-
2002. 12. 11
2/3
KTB817
Revision No : 2
0
C
BASE-EMITTER VOLTAGE V (V)
I - V
COLLECTOR CURRENT I (A)
BE
0
I - V
C
CE
CE
COLLECTOR EMITTER VOLTAGE V (V)
0
C
0
COLLECTOR CURRENT I (A)
-2
V - I
BE(sat)
C
C
COLLECTOR CURRENT I (A)
-0.1
-0.3
-3
-1
-0.1
BE(sat)
BASE-EMITTER SATURATION
DC CURRENT GAIN h
1
FE
-3
-1
-0.3
-0.1
COLLECTOR CURRENT I (A)
C
C
FE
h - I
TRANSITION FREQUENCY f (MHz)
1
T
-1
-3
-0.3
-0.1
COLLECTOR CURRENT I (A)
C
C
T
f - I
-10
-20
-30
-40
-50
-4
-6
-8
-10
-240mA
-200mA
-160mA
-120mA
-80mA
-40mA
-20mA
I =0
B
COLLECTOR CURRENT I (A)
V - I
CE(sat)
C
COLLECTOR-EMITTER VOLTAGE
-0.1
-0.01
-0.3
-1
C
-10
-30
-100
3
5
10
30
50
100
300
500
1k
V (V)
-3
-5
-10
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
-5
-10
V =-5V
CE
I /I =10
C B
CE(sat)
VOLTAGE V (V)
-10
-0.3
-0.5
-1
-3
-5
-10
I /I =10
C B
BE
C
-0.4
-0.8
-1.2
-1.6
-1
-2
-3
-4
-5
-6
-7
-8
V =-5V
CE
-10
3
5
10
30
50
100
V =-5V
CE
2002. 12. 11
3/3
KTB817
Revision No : 2
COLLECTOR CURRENT I (A)
C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
COLLECTOR-BASE VOLTAGE V (V)
C (pF)
ob
CB
COLLECTOR OUTPUT CAPACITANCE
-0.1
-30
-10
-3
-1
-1
10
-3
-30
-100
C - V
ob
CB
-10
30
50
100
300
500
1k
f=1MHz
-100
-300
-1k
-0.3
-0.5
-1
-3
-5
-10
-30
-50
-100
1mS
10mS
100mS
DC
PDF 
ZIP